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SMD Type
MOS Field Effect Transistor 2SK3366
TO-252
+0.15 1.50-0.15
+0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7
IC MOSFET
Features
Super low on-state resistance: RDS(on)1 = 21 m RDS(on)2 = 33m RDS(on)3 = 43m MAX. (VGS = 10 V, ID = 10 A)
Unit: mm
+0.1 0.80-0.1
Built-in gate protection diode
2.3
+0.15 4.60-0.15 +0.1 0.60-0.1
+0.28 1.50-0.1
+0.25 2.65-0.1
Low Ciss: Ciss =730 pF TYP.
+0.15 0.50-0.15
MAX. (VGS = 4 V, ID = 10A)
+0.2 9.70-0.2
0.127 max
+0.15 5.55-0.15
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 30 20 30 80 1.0 30 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Symbol IDSS IGSS VGS(off) Yfs Testconditons VDS=30V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=10A VGS=10V,ID=10A Drain to source on-state resistance RDS(on) VGS=4.5V,ID=10A VGS=4.0V,ID=10A Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Ciss Coss Crss ton tr toff tf QG QGS QGD VDD = 24V, VGS = 10 V, ID = 20A ID=10A,VGS(on)=10V,RG=10 ,VDD=15V VDS=10V,VGS=0,f=1MHZ 1.5 5 2.0 10 17.2 26 33 730 250 120 28 420 47 64 15 2.8 4.1 21 33 43 Min Typ Max 10 10 2.5 Unit A A V S m m m pF pF pF ns ns ns ns nC nC nC
3.80
MAX. (VGS = 4.5 V, ID = 10A)
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